发明名称 Semiconductor Constructions and Methods of Forming Electrically Conductive Contacts
摘要 Some embodiments include methods of forming electrically conductive contacts. An opening is formed through an insulative material to a conductive structure. A conductive plug is formed within a bottom region of the opening. A spacer is formed to line a lateral periphery of an upper region of the opening, and to leave an inner portion of an upper surface of the plug exposed. A conductive material is formed against the inner portion of the upper surface of the plug. Some embodiments include semiconductor constructions having a conductive plug within an insulative stack and against a copper-containing material. A spacer is over an outer portion of an upper surface of the plug and not directly above an inner portion of the upper surface. A conductive material is over the inner portion of the upper surface of the plug and against an inner lateral surface of the spacer.
申请公布号 US2015303100(A1) 申请公布日期 2015.10.22
申请号 US201514788960 申请日期 2015.07.01
申请人 Micron Technology, Inc. 发明人 Liu Zengtao T.
分类号 H01L21/768;H01L23/522;H01L23/528;H01L23/532 主分类号 H01L21/768
代理机构 代理人
主权项
地址 Boise ID US