Tungsten Sintered Compact Sputtering Target and Tungsten Film Formed Using Said Target

摘要

A tungsten sintered compact sputtering target, wherein a molybdenum strength detected with a secondary ion mass spectrometer (D-SIMS) is equal to or less than 1/10000 of the tungsten strength. This invention aims to reduce the specific resistance of a tungsten film sputtered using the tungsten sintered compact target by reducing the molybdenum in the tungsten sintered compact sputtering target and adjusting the grain size distribution of the W powder that is used during sintering.

主权项

1. A tungsten sintered compact sputtering target, wherein, based on a grain size distribution measurement of a W powder used during sintering, sintering is performed using a W powder in which a grain size ratio of tungsten grains of 10 μm or less is 30% or more and less than 70%.