VARISTOR

摘要

An electrically adjustable memory effect resistor comprises a stack comprising a superconductive material extending along an axis, a ferroelectric material and a conductive third material. The adjustable resistor comprises a means for controlling electrical voltage allowing an electric field to be generated between the superconductive material and the conductive material allowing the polarization direction of the ferroelectric second material to be modified. The adjustable resistor furthermore comprises an electrically insulating material placed between the ferroelectric material and the conductive material, the thickness of the insulating material varying in a direction parallel to the axis—so as to cause a variation in the electric field applied between the first layer and the third layer.

主权项

1. An electrically adjustable memory effect resistor comprising:
a stack comprising:
a first layer of a superconductive first material possessing a first under-doped state of first critical temperature and a second over-doped state of second critical temperature, the second critical temperature being above the first critical temperature, the first layer of superconductive material extending along an axis;a second layer of a ferroelectric second material polarized or having a component of its polarization in a direction parallel to the direction of the stack, the state of the first material depending on the polarization direction of the second material; anda third layer of a conductive third material; and a means for controlling the electrical voltage between the first layer of superconductive material and the third layer of conductive material, generating an electric field allowing the polarization direction of the ferroelectric second material to be modified when the electrical control voltage is higher than a threshold voltage value; the stack further comprises a fourth layer comprising at least one electrically insulating fourth material, the fourth layer being placed between the second layer of ferroelectric material and the third layer of conductive material, the thickness of the electrically insulating fourth layer varying in a direction parallel to the axis x and/or the fourth layer comprises a succession of material s of different dielectric constants in a direction parallel to the axis, so as to cause a variation in the electric field applied between the first layer and the third layer, the adjustable resistor being configured to operate over an interval of temperatures in which the difference between the electrical resistance of the over-doped state and the under-doped state of the first material is nonzero.