Self Aligned Patterning With Multiple Resist Layers

摘要

A method for using self aligned multiple patterning with multiple resist layers includes forming a first patterned resist layer onto a substrate, forming a spacer layer on top of the first patterned resist layer such that spacer forms on side walls of features of the first resist layer, and forming a second patterned resist layer over the spacer layer and depositing a masking layer. The method further includes performing a planarizing process to expose the first patterned resist layer, removing the first resist layer, removing the second resist layer, and exposing the substrate.

主权项

1. A method comprising:
forming a first patterned resist layer over a substrate; forming a spacer layer over the first patterned resist layer such that the spacer layer covers the first patterned resist layer; forming a second patterned resist layer over the spacer layer; forming a hard mask layer over the second patterned resist layer; and removing a first portion of the second patterned resist layer and a portion of the spacer layer to expose the first patterned resist layer, wherein a second portion of the second patterned resist layer is disposed over the substrate after removing the first portion of the second patterned resist layer.