发明名称 CHARGED PARTICLE DEVICE AND WIRING METHOD
摘要 An object of the present invention is to provide: a wiring method in which wiring is performed in a vacuum chamber of a charged particle device without using gas deposition or the like; and a charged particle device.;In order to achieve the above-described object, the present invention proposes: a wiring method in which a wiring line composed of an ionic liquid is formed by dropping an ionic liquid on a sample or preparing an ionic liquid on a sample table, on which a sample is placed in advance, and irradiating a wiring track between a wiring start point and a wiring end point with a charged particle beam; and a charged particle device. According to this configuration, wiring can be performed in a vacuum chamber of a charged particle device without using a gas deposition method or the like.
申请公布号 US2015299842(A1) 申请公布日期 2015.10.22
申请号 US201314376860 申请日期 2013.02.01
申请人 Hitachi High-Technologies Corporation 发明人 Hashimoto Yoichiro;Nakazawa Eiko;Konomi Mami;Takeuchi Shuichi
分类号 C23C14/22 主分类号 C23C14/22
代理机构 代理人
主权项 1. A wiring method, comprising irradiating a sample with a charged particle beam, whereby wiring is performed on the sample, wherein an ionic liquid is placed on a wiring track to be subjected to wiring, and the irradiation position of the charged particle beam is moved along the wiring track.
地址 Minato-ku, Tokyo JP