发明名称 |
CHARGED PARTICLE DEVICE AND WIRING METHOD |
摘要 |
An object of the present invention is to provide: a wiring method in which wiring is performed in a vacuum chamber of a charged particle device without using gas deposition or the like; and a charged particle device.;In order to achieve the above-described object, the present invention proposes: a wiring method in which a wiring line composed of an ionic liquid is formed by dropping an ionic liquid on a sample or preparing an ionic liquid on a sample table, on which a sample is placed in advance, and irradiating a wiring track between a wiring start point and a wiring end point with a charged particle beam; and a charged particle device. According to this configuration, wiring can be performed in a vacuum chamber of a charged particle device without using a gas deposition method or the like. |
申请公布号 |
US2015299842(A1) |
申请公布日期 |
2015.10.22 |
申请号 |
US201314376860 |
申请日期 |
2013.02.01 |
申请人 |
Hitachi High-Technologies Corporation |
发明人 |
Hashimoto Yoichiro;Nakazawa Eiko;Konomi Mami;Takeuchi Shuichi |
分类号 |
C23C14/22 |
主分类号 |
C23C14/22 |
代理机构 |
|
代理人 |
|
主权项 |
1. A wiring method, comprising irradiating a sample with a charged particle beam, whereby wiring is performed on the sample, wherein
an ionic liquid is placed on a wiring track to be subjected to wiring, and the irradiation position of the charged particle beam is moved along the wiring track. |
地址 |
Minato-ku, Tokyo JP |