发明名称 |
MICROWAVE HEATING APPARATUS AND MICROWAVE HEATING METHOD |
摘要 |
A microwave heating apparatus includes: a processing chamber including a ceiling wall and a bottom wall and accommodating a target object; a microwave introducing unit to generate a microwave for heating the target object; a holding unit to hold the target object; and a control unit to control the microwave introducing unit to heat the target object. During heating the target object, the holding unit holds the target object at a position in which a distance H1 from the top surface of the bottom wall to the bottom surface of the target object satisfies a condition of H1<λ/2, and a distance H2 from the bottom surface of the ceiling wall to the top surface of the target object satisfies a condition of 3λ/4≦H2<λ, λ being a microwave wavelength. |
申请公布号 |
US2015305097(A1) |
申请公布日期 |
2015.10.22 |
申请号 |
US201514684865 |
申请日期 |
2015.04.13 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
ASHIDA Mitsutoshi;HONG Seokhyoung |
分类号 |
H05B6/80;H05B6/64 |
主分类号 |
H05B6/80 |
代理机构 |
|
代理人 |
|
主权项 |
1. A microwave heating apparatus comprising:
a processing chamber configured to accommodate a target object, the processing chamber including a ceiling wall, a bottom wall in parallel with the ceiling wall, and a sidewall; a microwave introducing unit including one or more microwave introduction ports formed at the ceiling wall and configured to generate a microwave for heating the target object and to introduce the microwave into the processing chamber through the one or more microwave introduction ports; a holding unit configured to hold the target object to be opposite to the ceiling wall in the processing chamber; and a control unit configured to control the microwave introducing unit to heat the target object while controlling the holding unit to hold the target object at one vertical position in which a first distance H1 from the top surface of the bottom wall to the bottom surface of the target object satisfies a condition of H1<λ/2, and a second distance H2 from the bottom surface of the ceiling wall to the top surface of the target object satisfies a condition of 3λ/4≦H2<λ, λ being a wavelength of the microwave. |
地址 |
Tokyo JP |