发明名称 MICROWAVE HEATING APPARATUS AND MICROWAVE HEATING METHOD
摘要 A microwave heating apparatus includes: a processing chamber including a ceiling wall and a bottom wall and accommodating a target object; a microwave introducing unit to generate a microwave for heating the target object; a holding unit to hold the target object; and a control unit to control the microwave introducing unit to heat the target object. During heating the target object, the holding unit holds the target object at a position in which a distance H1 from the top surface of the bottom wall to the bottom surface of the target object satisfies a condition of H1<λ/2, and a distance H2 from the bottom surface of the ceiling wall to the top surface of the target object satisfies a condition of 3λ/4≦H2<λ, λ being a microwave wavelength.
申请公布号 US2015305097(A1) 申请公布日期 2015.10.22
申请号 US201514684865 申请日期 2015.04.13
申请人 TOKYO ELECTRON LIMITED 发明人 ASHIDA Mitsutoshi;HONG Seokhyoung
分类号 H05B6/80;H05B6/64 主分类号 H05B6/80
代理机构 代理人
主权项 1. A microwave heating apparatus comprising: a processing chamber configured to accommodate a target object, the processing chamber including a ceiling wall, a bottom wall in parallel with the ceiling wall, and a sidewall; a microwave introducing unit including one or more microwave introduction ports formed at the ceiling wall and configured to generate a microwave for heating the target object and to introduce the microwave into the processing chamber through the one or more microwave introduction ports; a holding unit configured to hold the target object to be opposite to the ceiling wall in the processing chamber; and a control unit configured to control the microwave introducing unit to heat the target object while controlling the holding unit to hold the target object at one vertical position in which a first distance H1 from the top surface of the bottom wall to the bottom surface of the target object satisfies a condition of H1<λ/2, and a second distance H2 from the bottom surface of the ceiling wall to the top surface of the target object satisfies a condition of 3λ/4≦H2<λ, λ being a wavelength of the microwave.
地址 Tokyo JP