| 发明名称 |
BONDED EPITAXIAL OXIDE STRUCTURES FOR COMPOUND SEMICONDUCTOR ON SILICON SUBSTRATES |
| 摘要 |
A structure includes a handle substrate and an epitaxial oxide layer. The epitaxial oxide layer is bonded directly or indirectly to the handle substrate. Also included is a compound semiconductor layer adjoining and lattice matched to the epitaxial oxide layer. |
| 申请公布号 |
US2015303251(A1) |
申请公布日期 |
2015.10.22 |
| 申请号 |
US201514732705 |
申请日期 |
2015.06.06 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;HASHEMI POUYA;KHAKIFIROOZ ALI;REZNICEK ALEXANDER |
| 分类号 |
H01L29/06;H01L29/22;H01L29/267;H01L29/205 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A structure comprising:
a handle substrate; an epitaxial oxide layer, the epitaxial oxide layer being bonded directly or indirectly to the handle substrate, and a compound semiconductor layer adjoining and lattice matched to the epitaxial oxide layer. |
| 地址 |
ARMONK NY US |
