| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a plasma processing device enhanced in yield by improving the accuracy of processing.SOLUTION: A plasma processing device comprises: a processing chamber 107 arranged in a vacuum container; a microwave power source 103 that outputs first high frequency power for supplying an electric field for generating plasma in a processing chamber, the plasma being used for processing a sample to be processed; a sample support 109 arranged in the processing chamber and used for placing the sample on its upper surface; and a high frequency bias power source 110 that intermittently outputs second high frequency power for generating a bias potential, to an electrode arranged in the sample support, and that is variably adjustable the outputting time. The plasma processing device includes a function configured to adjust the operation of the plasma processing device by using an electric current voltage sensor analysis substrate 113, for the result of detecting a change caused during the time of the waveform of electric current or voltage in a transition of the second high frequency power, in synchronization with the start of the intermittent output of this second high frequency power.</p> |
