| 发明名称 |
DUAL SELECTIVE DEPOSITION |
| 摘要 |
Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials. |
| 申请公布号 |
US2015299848(A1) |
申请公布日期 |
2015.10.22 |
| 申请号 |
US201514687833 |
申请日期 |
2015.04.15 |
| 申请人 |
ASM IP Holding B.V. |
发明人 |
Haukka Suvi P.;Matero Raija H.;Tois Eva;Niskanen Antti;Tuominen Marko;Huotari Hannu;Pore Viljami J. |
| 分类号 |
C23C16/04;C23C16/06;C23C16/56;C23C16/30;C23C16/455;C23C16/02;C23C16/40 |
主分类号 |
C23C16/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for selectively depositing a first metallic material on a first surface of a substrate and a second dielectric material on a second surface of the same substrate, wherein the first surface is a surface of metal or semiconductor material and the second surface comprises OH, NHx or SHx-terminations, the method comprising:
selectively depositing the first metallic material on the first surface of the substrate relative to the second surface of the substrate; and selectively depositing the second dielectric material on the second surface of the substrate relative to the first surface. |
| 地址 |
Almere NL |
