FORMING METHOD OF THIN FILM OF TANTALUM OXIDE

摘要

PROBLEM TO BE SOLVED: To provide a forming method of a thin film of tantalum oxide (TaO) on a glass substrate using a transfer type atmospheric CVD process.SOLUTION: In a forming method of a thin film of tantalum oxide (TaO), tantalum pentachloride (TaCl) and alcohols (ROH) of carbons of 3 or less as raw material gases are supplied at a molar ratio of ROH/TaClof 3 or more onto a glass substrate transferred by a substrate transfer type atmospheric CVD process to form a thin film of tantalum oxide (TaO) on the glass substrate. The forming method of a thin film of tantalum oxide (TaO) includes a tantalum pentachloride forming step for forming tantalum pentachloride (TaCl) by reacting metal tantalum (Ta) and chloride (Cl), the tantalum pentachloride forming step being practiced by using a fixed-bed flow reactor and adjusting reaction conditions so that the conversion (X) of chloride (Cl) is 60% or higher (X≥0.6).