SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND RESIST PATTERN FORMING METHOD

摘要

A method for manufacturing a semiconductor device comprising, forming a first photoresist pattern by exposing and then developing a first photoresist film formed on a substrate, irradiating the first photoresist pattern with UV light to cure its surface, forming a second photoresist film so as to cover the substrate and the first photoresist pattern, forming a second photoresist pattern and performing ion implantation in the substrate using the second photoresist pattern. The second photoresist pattern is not subjected to UV irradiation after the second photoresist film has been developed and before the ion implantation is performed, or is irradiated with the UV light, after the second photoresist film has been developed and before the ion implantation is performed, under a reduced condition relative to that for the first photoresist pattern.

主权项

1. A method for manufacturing a semiconductor device comprising:
a first step of forming a first photoresist film on a substrate; a second step of forming a first photoresist pattern by exposing and then developing the first photoresist film; a third step of irradiating the first photoresist pattern with ultraviolet light to cure a surface of the first photoresist pattern; a fourth step of forming a second photoresist film so as to cover the substrate and the first photoresist pattern; a fifth step of forming a second photoresist pattern at least a part of which is provided on the first photoresist pattern by exposing and then developing the second photoresist film; and a sixth step of performing ion implantation in the substrate using the second photoresist pattern, wherein the second photoresist pattern is not subjected to ultraviolet irradiation after the second photoresist film has been developed and before the ion implantation is performed, or the second photoresist pattern is irradiated with the ultraviolet light, after the second photoresist film has been developed and before the ion implantation is performed, under a condition that at least one of an ultraviolet light irradiation amount, an ultraviolet light irradiation time, and an atmospheric temperature at the time of ultraviolet irradiation is reduced relative to that in the third step.