| 发明名称 |
METAL OXIDE TFT WITH IMPROVED STABILITY AND MOBILITY |
| 摘要 |
A thin film circuit includes a thin film transistor with a metal oxide semiconductor channel having a conduction band minimum (CBM) with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band minimum (CBM) with a second energy level. The second energy level being lower than, equal to, or no more than 0.5 eV above the first energy level. The circuit is used for an electronic device including any one of an AMLCD, AMOLED, AMLED, AMEPD. |
| 申请公布号 |
US2015303311(A1) |
申请公布日期 |
2015.10.22 |
| 申请号 |
US201514753460 |
申请日期 |
2015.06.29 |
| 申请人 |
Yu Gang;Shieh Chan-Long;Musolf Juergen;Foong Fatt;Xiao Tian |
发明人 |
Yu Gang;Shieh Chan-Long;Musolf Juergen;Foong Fatt;Xiao Tian |
| 分类号 |
H01L29/786;H01L21/02;H01L23/29;H01L29/423;H01L29/66;H01L23/31 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film circuit comprising at least one of a metal oxide thin film transistor consisting of:
a metal oxide semiconductor channel, the metal oxide semiconductor channel having a conduction band minimum (CBM) with a first energy level; and a layer of passivation material covering at least a portion of the metal oxide semiconductor channel, the passivation material having a conduction band minimum (CBM) with a second energy level, the second energy level being lower than, equal to, or no more than 0.5 eV above the first energy level. |
| 地址 |
Santa Barbara CA US |
