SEMICONDUCTOR DEVICE

摘要

This semiconductor device includes: a first-conductive-type semiconductor layer comprising SiC; a plurality of second-conductive-type body regions which are formed on the surface section of the semicondutor layer and each form a single cell; a first-conductive-type source region formed inside the body regions; a gate electrode facing the body regions with a gate-insulating film interposed therebetween; a first-conductive-type drain region and a second-conductive-type collector region which are formed adjacent to one another on the rear-surface section of the semiconductor layer; and a drift region formed between the body and drain regions. Furthermore, the collector region is formed along the X-axis on the surface of the semiconductor layer so as to cover a region including two or more of the single cells.