Semiconductor device and method of manufacturing the same

摘要

A semiconductor device includes: a p-type silicon substrate (20); a shallow n-well (34) formed in the silicon substrate (20); a shallow p-well (30) formed beside the shallow n-well (34) in the silicon substrate (20); and a deep n-well (28) which is formed beside the shallow p-well (30) in the silicon substrate (20), and which is deeper than the shallow p-well (30). In addition, a deep p-well (26), which is deeper than the shallow p-well (30), is formed between the shallow p-well (30) and the deep n-well (28) in the silicon substrate (20).