| 摘要 |
<p>A sensor (1) comprising an n-dosed/p-dosed substrate (2), and a Wheatstone bridge (3) arranged on the substrate (2) is disclosed. A field shield (4) is arranged on the substrate (2) in such a manner that the field shield (4) covers the Wheatstone bridge (3). A quasi-DC voltage is supplied to the Wheatstone bridge (3), and a DC voltage is supplied to the substrate (2), the level of said DC voltage being higher/lower than or equal to the quasi-DC voltage supplied to the Wheatstone bridge (3). A voltage may be supplied to the field shield (4), the level of said voltage being higher/lower than or equal to the quasi-DC voltage supplied to the Wheatstone bridge (3).</p> |
