TRANSISTOR HAVING NITRIDE SEMICONDUCTOR USED THEREIN AND METHOD FOR MANUFACTURING TRANSISTOR HAVING NITRIDE SEMICONDUCTOR USED THEREIN

摘要

A portion of an AlN spacer layer of a high electron mobility transistor (GaN HEMT) having a nitride semiconductor used therein is removed only in a region directly below a gate electrode and in a vicinity of the region, and a length of a portion where the AlN spacer layer is not present is sufficiently smaller than a distance between a source electrode and a drain electrode.