| 摘要 |
<p>The purpose of the present invention is to provide a silicon carbide semiconductor device having high repeatability and a high withstand voltage. In order to achieve the purpose, in multi-formed field limiting rings, the distance between the rings is gradually reduced toward a corner portion from a line portion, and the impurity concentration of a low-concentration region that sandwiches a high-concentration region at the center of a line is reduced toward the corner portion from the line portion.</p> |
