| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a trench gate type semiconductor device in which Cgd can be reduced while suppressing an increase in ON resistance, without reducing credibility of a gate oxide film while suppressing manufacturing costs, and a manufacturing method thereof. <P>SOLUTION: In a semiconductor device, a gate insulating film is provided on an inner wall surface of a trench provided on a first semiconductor layer of a first conductivity type that is a low-density drain region, a second semiconductor layer of the first conductivity type is provided on a bottom of the trench via the gate insulating film, and a third semiconductor layer of a second conductivity type is provided in an upper part of the second semiconductor layer. On the first semiconductor layer around the trench, a semiconductor layer of the second conductivity type is provided which becomes a body region such that a position of a boundary on the bottom with the first semiconductor layer becomes approximately the same as a position of a boundary with the second and third semiconductor layers. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
