| 摘要 |
<p>The invention provides a thermistor material which can obtain stable thermistor characteristics and excellent heat resistance in a non-sintered way, a temperature sensor, and a manufacturing method thereof. The thermistor material is formed by nitride containing Hf, Al, and N, wherein the nitride has a resistivity of 1 ~ 10000 [omega]cm, and a material B constant value of 2000 K or above. Especially, in a ternary diagram of the Hf-Al-N, a composition ratio of Hf : Al : N is within a range from point A to point F, that is, by atom %, 13.1 : 21.9 : 65.0 (point A), 20.6 : 19.9 : 59.5 (point B), 28.6 : 12.4 : 58.9 (point C), 43.4 : 0.1 : 56.4 (point D), 37.1 : 0.5 : 62.4 (point E), and 23.6 : 11.9 : 64.5 (point F).</p> |
