| 发明名称 |
Semiconductor device and method for producing the same |
| 摘要 |
A semiconductor device of an embodiment includes a p-type SiC layer; a SiC region provided on the p-type SiC layer and containing H (hydrogen) or D (deuterium) in an amount of 1 × 10 18 cm -3 or more and 1 × 10 22 cm -3 or less; and a metal layer provided on the SiC region. |
| 申请公布号 |
EP2933826(A2) |
申请公布日期 |
2015.10.21 |
| 申请号 |
EP20150155813 |
申请日期 |
2015.02.19 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIMIZU, TATSUO;SHINOHE, TAKASHI |
| 分类号 |
H01L21/28;H01L21/265;H01L21/30;H01L21/324;H01L21/336;H01L29/06;H01L29/45;H01L29/78 |
主分类号 |
H01L21/28 |
| 代理机构 |
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