发明名称 |
反射構造を有する半導体発光ダイオードおよびその製造方法 |
摘要 |
Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts. |
申请公布号 |
JP5797640(B2) |
申请公布日期 |
2015.10.21 |
申请号 |
JP20120510802 |
申请日期 |
2010.02.23 |
申请人 |
クリー インコーポレイテッドCREE INC. |
发明人 |
ドノフリオ、マシュー;イベトソン、ジェームス;ヤオ、ジンミン ジャミー |
分类号 |
H01L33/38;H01L33/36;H01L33/48;H01L33/50;H01L33/60 |
主分类号 |
H01L33/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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