COMPOSITE SUBSTRATE USED FOR GAN GROWTH

摘要

The present application discloses a composite substrate used for GaN growth, comprising a thermally and electrically conductive layer (1) with a melting point greater than 1000°C and a GaN mono-crystalline layer (2) bcated on the thermally and electrically conductive layer (1). The thermally and electrically conductive layer (1) and the GaN mono-crystalline layer (2) are bonded through a van der Waals force or a flexible medium layer (3). The composite substrate can further include a reflective layer (4) located inside, in the lower portion, or at a lower surface of the GaN mono-crystalline layer. In the disclosed composite substrate, iso-epitaxy required by GaN epitaxy is provided; crystalline quality is improved; and a vertical structure LED can be directly prepared. Further, a thin GaN mono-crystalline layer greatly reduces cost, which is advantageous in applications.