发明名称 Semiconductor integrated circuit device and high-frequency power amplifier module
摘要 The invention provides a semiconductor integrated circuit device and a high-frequency power amplifier module capable of reducing variations in the transmission power characteristics. The semiconductor integrated circuit device and the high-frequency power amplifier module each include, for example, a bandgap reference circuit, a regulator circuit, and a reference-voltage correction circuit which is provided between the bandgap reference circuit and the regulator circuit and which includes a unity gain buffer. The reference-voltage correction circuit corrects variations in a bandgap voltage from the bandgap reference circuit. The reference-voltage correction circuit includes first to third resistance paths having mutually different resistance values, and corrects the variations by selectively supplying a current which reflects an output voltage of the unity gain buffer to any one of the first to third resistance paths. The selection in this case is performed by connecting a bonding wire to any one of the terminals REF1 to REF3.
申请公布号 US9166531(B2) 申请公布日期 2015.10.20
申请号 US201214366719 申请日期 2012.12.05
申请人 MURATA MANUFACTURING CO., LTD. 发明人 Iijima Masanori;Morisawa Fuminori
分类号 H03F3/04;G05F1/10;H03F1/02;H03F1/30;H03F1/56;H03F3/195;H03F3/24;H03F3/45;H03F3/72;H03G1/00;H03F3/193;H03F3/213 主分类号 H03F3/04
代理机构 Pearne & Gordon LLP 代理人 Pearne & Gordon LLP
主权项 1. A semiconductor integrated circuit device comprising: a reference-voltage generating circuit configured to generate a first reference voltage; a reference-voltage correction circuit supplied with the first reference voltage and configured to generate a second reference voltage obtained by correcting the first reference voltage; and a regulator circuit including a first amplifier circuit of a negative feedback configuration and a feedback resistor, and configured to generate a predetermined output voltage according to the second reference voltage and a resistance value of the feedback resistor, wherein the reference-voltage correction circuit includes: a buffer circuit supplied with the first reference voltage, and configured to output a first voltage with a potential approximately equal to that of the first reference voltage and perform impedance conversion between an input and an output;a first resistor configured to generate a first current having a current value according to a voltage value of the first voltage;a first node supplied with a second current having a current value proportional to the current value of the first current; andfirst, second, and third resistance paths selectively coupled between the first node and a first power supply voltage and having mutually different resistance values, and the second reference voltage is generated in the first node on the basis of a resistance value associated with any one resistance path selected from among the first, second, and third resistance paths and the current value of the second current.
地址 Kyoto JP