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1. A semiconductor device comprising:
a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor, wherein: the first transistor and the fifth transistor are p-channel transistors, the second transistor and the sixth transistor are n-channel transistors, the third transistor includes an oxide semiconductor layer including a channel formation region, the fourth transistor includes an oxide semiconductor layer including a channel formation region, the seventh transistor includes an oxide semiconductor layer including a channel formation region, the eighth transistor includes an oxide semiconductor layer including a channel formation region, a source of the first transistor is configured to be supplied with a high voltage, a source of the second transistor is configured to be supplied with a low voltage, a drain of the first transistor is electrically connected to a drain of the second transistor, one of a source and a drain of the seventh transistor, and one of a source and a drain of the eighth transistor, a source of the fifth transistor is configured to be supplied with a high voltage, a source of the sixth transistor is configured to be supplied with a low voltage, a drain of the fifth transistor is electrically connected to a drain of the sixth transistor, one of a source and a drain of the third transistor, and one of a source and a drain of the fourth transistor, a gate of the first transistor is electrically connected to the other of the source and the drain of the fourth transistor, a gate of the second transistor is electrically connected to the other of the source and the drain of the third transistor, a gate of the fifth transistor is electrically connected to the other of the source and the drain of the eighth transistor, and a gate of the sixth transistor is electrically connected to the other of the source and the drain of the seventh transistor. |
