发明名称 Thin film transistor array substrate and liquid crystal display device
摘要 The present invention provides a thin film transistor array substrate and a liquid crystal display device including the thin film transistor array substrate that are preferably applicable to a liquid crystal display device including the three-layered electrode structure that enables high response speed and high transmittance, and can have a high aperture ratio. The thin film transistor array substrate of the present invention includes: a thin film transistor element, gate bus lines, and source bus lines, in which the thin film transistor array substrate includes electrodes, the electrodes include a first electrode and a second electrode, the first electrode includes a linear portion along the source bus lines, the first electrode includes a linear portion along the gate bus lines, at least one linear portion along the source bus lines is disposed transversely to the linear portion along the gate bus lines in a plan view of main face of the substrate and is connected to a drain electrode of the thin film transistor element at a position overlapping the gate bus lines, and the second electrode is a planar electrode.
申请公布号 US9165948(B2) 申请公布日期 2015.10.20
申请号 US201214351998 申请日期 2012.10.24
申请人 Sharp Kabushiki Kaisha 发明人 Iyama Yuichi;Yoshioka Takatomo;Tsuda Kazuhiko
分类号 H01L27/32;H01L27/12;G02F1/1343;G02F1/1362 主分类号 H01L27/32
代理机构 Keating & Bennett, LLP 代理人 Keating & Bennett, LLP
主权项 1. A thin film transistor array substrate, comprising: a thin film transistor element; gate bus lines; and source bus lines, wherein the thin film transistor array substrate includes a first electrode and a second electrode, the first electrode includes a linear portion along the source bus lines, the first electrode includes a linear portion along the gate bus lines, at least one linear portion along the source bus lines is disposed transversely to the linear portion along the gate bus lines in a plan view of a main face of the substrate and is connected to a drain electrode of the thin film transistor element at a position overlapping the gate bus lines, the source bus lines include at least two source bus lines that simultaneously drive at least two pixels along the source bus lines, and the second electrode is a planar electrode.
地址 Osaka JP