| 发明名称 | Semiconductor device, method for manufacturing the same, power supply apparatus and high-frequency amplification unit | ||
| 摘要 | A semiconductor device includes a compound semiconductor multilayer structure, a fluorine-containing barrier film that covers a surface of the compound semiconductor multilayer structure, and a gate electrode that is arranged over the compound semiconductor multilayer structure with the fluorine-containing barrier film placed the gate and the compound semiconductor multilayer structure. | ||
| 申请公布号 | US9165851(B2) | 申请公布日期 | 2015.10.20 |
| 申请号 | US201213597557 | 申请日期 | 2012.08.29 |
| 申请人 | FUJITSU LIMITED | 发明人 | Ozaki Shirou;Takeda Masayuki |
| 分类号 | H01L29/66;H01L23/31;H01L29/778;H01L29/417;H01L29/423;H01L29/51;H01L29/20;H01L23/29 | 主分类号 | H01L29/66 |
| 代理机构 | Kratz, Quintos & Hanson, LLP | 代理人 | Kratz, Quintos & Hanson, LLP |
| 主权项 | 1. A semiconductor device comprising: a compound semiconductor multilayer structure; a fluorine-containing barrier film that covers a surface of the compound semiconductor multilayer structure; an insulating film placed on the fluorine-containing barrier film; and a gate electrode that is arranged over the compound semiconductor multilayer structure and placed on the insulating film with the fluorine-containing barrier film placed between the gate and the compound semiconductor multilayer structure, wherein the fluorine-containing barrier film is any one selected from the group consisting of fluorocarbon films, boron fluoride films, films having a side-chain containing fluorocarbon, films having a side-chain containing boron fluoride, films having a side-chain containing oxygen fluoride, and films having a side-chain containing nitrogen fluoride. | ||
| 地址 | Kawasaki JP | ||