发明名称 PURIFICATION OF INDUSTRIAL SILICON
摘要 FIELD: metallurgy.SUBSTANCE: removal of impurities from industrial silicon, in particular, of iron comprises fusing the charge in the crucible, silicon teeming and melt crystallization for pushing off of impurities. Prior to teeming iron content in silicon is defined. Teeming and crystallization are performed in inclined crucibles preheated to 400-600°C. The inclination angle of said crucibles relative to horizon in the range of 0-90 degrees is defined by the formula ? = 400·Fe, where ? is said inclination angle, degrees, Fe is iron content in silicon before teeming, wt %. Invention allows the production of silicon with iron content lower than 0.20 wt %.EFFECT: higher purification degree.2 tbl
申请公布号 RU2565198(C1) 申请公布日期 2015.10.20
申请号 RU20140147958 申请日期 2014.11.27
申请人 OBSHCHESTVO S OGRANICHENNOJ OTVETSTVENNOST'JU "OB"EDINENNAJA KOMPANIJA RUSAL INZHENERNO-TEKHNOLOGICHESKIJ TSENTR" 发明人 ELKIN DMITRIJ KONSTANTINOVICH;KOSHKIN SERGEJ VALENTINOVICH;GOLOSEEV SERGEJ IVANOVICH;PEGANOV MIKHAIL VLADISLAVOVICH;DRESVJANSKIJ DMITRIJ VIKTOROVICH;MOLJAVKO ANTON ALEKSEEVICH;ELKIN KONSTANTIN SERGEEVICH
分类号 C01B33/037;C01B33/02;C30B11/00;C30B29/06 主分类号 C01B33/037
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