发明名称 |
Developer and patterning process |
摘要 |
An aqueous solution containing 0.1-20 wt % of a benzyltrialkylammonium hydroxide is a useful developer for photosensitive resist materials. When an exposed resist film is developed in the developer, any swell of the resist film during development is suppressed. A resist pattern with minimal edge roughness can be formed while preventing pattern collapse or bridge defect formation. |
申请公布号 |
US9164392(B2) |
申请公布日期 |
2015.10.20 |
申请号 |
US201414193193 |
申请日期 |
2014.02.28 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
Hatakeyama Jun |
分类号 |
G03F7/32 |
主分类号 |
G03F7/32 |
代理机构 |
Westerman, Hattori, Daniels & Adrian, LLP |
代理人 |
Westerman, Hattori, Daniels & Adrian, LLP |
主权项 |
1. A developer for photosensitive resist materials comprising an aqueous solution containing 0.1 to 20% by weight of a substituted or unsubstituted benzyltrialkylammonium hydroxide and 0.0001 to 5% by weight of an acetylene alcohol having the general formula (AA-1):wherein R5 to R8 are each independently C1-C20 alkyl, R9 and R10 are each independently C1-C10 alkylene, a and b are such integers that the sum a+b is 0 to 60. |
地址 |
Tokyo JP |