发明名称 Developer and patterning process
摘要 An aqueous solution containing 0.1-20 wt % of a benzyltrialkylammonium hydroxide is a useful developer for photosensitive resist materials. When an exposed resist film is developed in the developer, any swell of the resist film during development is suppressed. A resist pattern with minimal edge roughness can be formed while preventing pattern collapse or bridge defect formation.
申请公布号 US9164392(B2) 申请公布日期 2015.10.20
申请号 US201414193193 申请日期 2014.02.28
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 Hatakeyama Jun
分类号 G03F7/32 主分类号 G03F7/32
代理机构 Westerman, Hattori, Daniels & Adrian, LLP 代理人 Westerman, Hattori, Daniels & Adrian, LLP
主权项 1. A developer for photosensitive resist materials comprising an aqueous solution containing 0.1 to 20% by weight of a substituted or unsubstituted benzyltrialkylammonium hydroxide and 0.0001 to 5% by weight of an acetylene alcohol having the general formula (AA-1):wherein R5 to R8 are each independently C1-C20 alkyl, R9 and R10 are each independently C1-C10 alkylene, a and b are such integers that the sum a+b is 0 to 60.
地址 Tokyo JP