| 发明名称 | Graphene light-emitting device and method of manufacturing the same | ||
| 摘要 | A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed. | ||
| 申请公布号 | US9166099(B2) | 申请公布日期 | 2015.10.20 |
| 申请号 | US201113234739 | 申请日期 | 2011.09.16 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Hwang Sung-won;Ko Geun-woo;Sim Sung-hyun;Chung Hun-jae;Seong Han-kyu;Sone Cheol-soo;Lee Jin-hyun;Ko Hyung-duk;Choi Suk-ho;Kim Sung |
| 分类号 | H01L29/06;H01L33/06;H01L29/786;H01L33/34;H01L51/00 | 主分类号 | H01L29/06 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC |
| 主权项 | 1. A graphene light-emitting device comprising: a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the p-type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed, and wherein the active graphene comprises a graphene superlattice. | ||
| 地址 | Suwon-si KR | ||