N-doped single crystal diamond substrates and methods therefor

摘要

The disclosure relates to the formation of n-doped single crystal diamond (SCD). In general, a SCD substrate is preferentially anisotropically etched to provide one or more recesses in the SCD substrate, where the recesses are defined by (1 1 1) surface sidewalls resulting from the preferential anisotropic etching process. The recesses generally have a pyramidal shape. N-type doped SCD (e.g., using a phosphorous dopant) is then deposited into the preferentially anisotropically etched recesses. When the SCD substrate is a p-type diamond (e.g., using a boron dopant), the resulting structure can be used as a p-n junction, for example for use in various power electronic apparatus such as diodes, etc.

主权项

1. A method for forming an n-doped single crystal diamond (SCD) structure, the method comprising:
(a) providing a SCD layer having a growth surface; (b) preferentially anisotropically etching a plurality of randomly sized and positioned recesses in the SCD layer through the growth surface, the recesses each (A) being defined by one or more (111) surface sidewalls etched into the SCD layer through the growth surface, (B) having a base defined by intersections of the sidewalls and the growth surface of the SCD layer, and (C) having pyramidal shapes with rectangular bases having a distribution of aspect ratios ranging from 1 to more than 1, the aspect ratio of each rectangular base being a ratio of a long side relative to a short side of the rectangular base; and (c) depositing n-doped SCD into the recesses, thereby forming an n-doped SCD region in the recesses and the n-doped SCD structure.