| 发明名称 | High-reliability high-speed memristor | ||
| 摘要 | A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material. | ||
| 申请公布号 | US9165645(B2) | 申请公布日期 | 2015.10.20 |
| 申请号 | US201114127873 | 申请日期 | 2011.06.24 |
| 申请人 | Hewlett-Packard Development Company, L.P. | 发明人 | Miao Feng;Yang Jianhua;Strachan John Paul;Yi Wei;Ribeiro Gilberto Medeiros;Williams R Stanley |
| 分类号 | G11C13/00;H01L45/00 | 主分类号 | G11C13/00 |
| 代理机构 | Hewlett-Packard Patent Department | 代理人 | Hewlett-Packard Patent Department |
| 主权项 | 1. A memristor, comprising: a first electrode; a second electrode parallel to the first electrode; and a switching layer disposing between the first and second electrode, and containing a conduction channel and a reservoir zone, the conduction channel having a Fermi glass material having a variable concentration of mobile ions, the reservoir zone being laterally disposed relative to the conduction channel and functioning as a source/sink of mobile ions for the conduction channel during a switching operation, in which the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change a conductivity of the Fermi glass material. | ||
| 地址 | Houston TX US | ||