| 发明名称 |
Fine pattern structures having block co-polymer materials |
| 摘要 |
A fine pattern structure includes a layer having or including alternating protrusion portions and recess portions, polymer patterns disposed in recess regions formed by the recess portions, brush patterns disposed on top surfaces of the protrusion portions, and a block co-polymer layer including first polymer block patterns formed on the brush patterns and second polymer block patterns formed on the polymer patterns. |
| 申请公布号 |
US9165769(B1) |
申请公布日期 |
2015.10.20 |
| 申请号 |
US201514738725 |
申请日期 |
2015.06.12 |
| 申请人 |
SK hynix Inc. |
发明人 |
Ban Keun Do;Bok Cheol Kyu;Kim Myoung Soo;Heo Jung Gun |
| 分类号 |
H01L29/205;H01L33/00;H01L23/58;H01L23/04;H01L21/027;H01L21/033;H01L21/308 |
主分类号 |
H01L29/205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A fine pattern structure, the structure comprising:
a layer including alternating protrusion portions and recess portions; polymer patterns disposed in recess regions of the recess portions; brush patterns disposed on top surfaces of the protrusion portions; and a block co-polymer layer, the block co-polymer layer including first polymer block patterns disposed on the brush patterns and second polymer block patterns disposed on the polymer patterns,
wherein top surfaces of the polymer patterns are coplanar with the top surfaces of the protrusion portions,wherein the first polymer block patterns are aligned with the brush patterns, andwherein the second polymer block patterns are aligned with the polymer patterns. |
| 地址 |
Icheon KR |
