发明名称 |
Thin film transistor, array substrate and manufacturing method thereof, and display panel |
摘要 |
Embodiments of the invention provide a thin film transistor, an array substrate and a manufacturing method thereof, and a display panel. The thin film transistor comprises: an active layer pattern, a source electrode, a drain electrode and a gate electrode. The gate electrode is positioned above the active layer pattern, the source electrode is connected with the active layer pattern, the drain electrode is connected with the active layer pattern, and the source electrode and the drain electrode are disposed in an adjacent layer of the active layer pattern. |
申请公布号 |
US9166059(B2) |
申请公布日期 |
2015.10.20 |
申请号 |
US201213876673 |
申请日期 |
2012.11.08 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD.;CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
Kim Won Seok;Kim Pil Seok |
分类号 |
H01L29/66;H01L21/84;H01L29/786;H01L27/12;H01L29/417 |
主分类号 |
H01L29/66 |
代理机构 |
Ladas & Parry LLP |
代理人 |
Ladas & Parry LLP |
主权项 |
1. A thin film transistor, comprising an active layer pattern, a source electrode, a drain electrode and a gate electrode,
wherein the gate electrode is positioned above the active layer pattern, the source electrode and the drain electrode, the source electrode is connected with the active layer pattern, the drain electrode is connected with the active layer pattern, and the source electrode and the drain electrode are disposed in an adjacent layer of the active layer pattern without any layer formed between the active layer pattern and the source electrode, or between the active layer pattern and the drain electrode. |
地址 |
Beijing CN |