| 发明名称 |
Resistive memory |
| 摘要 |
A memory device includes an upper conductive layer, a lower layer, and a resistive, optical or magnetic matrix positioned between the upper and lower layers. |
| 申请公布号 |
US9165979(B2) |
申请公布日期 |
2015.10.20 |
| 申请号 |
US201414150654 |
申请日期 |
2014.01.08 |
| 申请人 |
|
发明人 |
Tran Bao |
| 分类号 |
H01L45/00;H01L27/24;G11C11/21;B82Y10/00;G11B9/14;G11C11/54;G11C13/02;G11C13/04;H01L51/42;G11C13/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
Tran Associates |
代理人 |
Tran Associates |
| 主权项 |
1. A memory device, comprising:
an upper metallic layer, a lower layer, and a switching medium positioned between the upper and lower layers, wherein a voltage pulse is applied to the upper and lower layers to cause nanoparticles to form a conduction path between the upper and lower layers wherein each element comprises a combination with a zero temperature coefficient. |
| 地址 |
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