发明名称 |
Pulsed gas plasma doping method and apparatus |
摘要 |
A method and apparatus for doping a surface of a substrate with a dopant, with the dopant being for example phosphine or arsine. The doping is performed with a plasma formed primarily of an inert gas such as helium or argon, with a low concentration of the dopant. To provide conformal doping, preferably to form a monolayer of the dopant, the gas flow introduction location is switched during the doping process, with the gas mixture primarily introduced through a center top port in the process chamber during a first period of time followed by introduction of the gas mixture primarily through peripheral or edge injection ports for a second period of time, with the switching continuing in an alternating fashion as the plasma process. |
申请公布号 |
US9165771(B2) |
申请公布日期 |
2015.10.20 |
申请号 |
US201414244481 |
申请日期 |
2014.04.03 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
Ventzek Peter;Nemoto Takenao;Ueda Hirokazu;Kobayashi Yuuki;Horigome Masahiro |
分类号 |
H01L21/223;H01J37/32;H01L21/265;H01L21/66;H01L29/66 |
主分类号 |
H01L21/223 |
代理机构 |
Rothwell, Figg, Ernst & Manbeck, P.C. |
代理人 |
Rothwell, Figg, Ernst & Manbeck, P.C. |
主权项 |
1. A method for plasma processing comprising:
loading a substrate into a plasma processing chamber and placing the substrate on a substrate holder, the plasma processing chamber having a top wall opposing the substrate holder, and a peripheral wall surrounding the substrate holder; forming a plasma in the plasma processing chamber; introducing a first gas mixture, for a first time period, at a first flow rate, into the plasma processing chamber, from at least one gas injection port located in a top central region of the plasma processing chamber, the first gas mixture comprising a dopant species; following the introduction of the first gas mixture, introducing a second gas mixture, for a second time period, at a second flow rate, into the plasma processing chamber, from at least one gas injection port located in a peripheral region of the plasma processing chamber, the second gas mixture comprising the dopant species, wherein during at least a portion of the second time period the second flow rate is at least 80% of a total flow rate from both the at least one gas injection port located in the top central region and the at least one injection port located in the peripheral region; repeating the steps of introducing the first gas mixture and introducing the second gas mixture, to form a layer of dopant species on structures on the substrate. |
地址 |
Tokyo JP |