发明名称 Devices including a gas barrier layer
摘要 Devices that include a near field transducer (NFT); a gas barrier layer positioned on at least a portion of the NFT; and a wear resistance layer positioned on at least a portion of the gas barrier layer wherein the gas barrier layer includes tantalum oxide (TaO), titanium oxide (TiO), chromium oxide (CrO), silicon oxide (SiO), aluminum oxide (AlO), titanium oxide (TiO), zirconium oxide (ZrO), yttrium oxide (YO), magnesium oxide (MgO), beryllium oxide (BeO), niobium oxide (NbO), hafnium oxide (HfO), vanadium oxide (VO), strontium oxide (SrO), or combinations thereof; silicon nitride (SiN), aluminum nitride (Al), boron nitride (BN), titanium nitride (TiN), zirconium nitride (ZrN), niobioum nitride (NbN), hafnium nitride (HfN), chromium nitride (CrN), or combinations thereof silicon carbide (SiC), titanium carbide (TiC), zirconium carbide (ZrC), niobioum carbide (NbC), chromium carbide (CrC), vanadium carbide (VC), boron carbide (BC), or combinations thereof or combinations thereof.
申请公布号 US9165576(B2) 申请公布日期 2015.10.20
申请号 US201514711992 申请日期 2015.05.14
申请人 Seagate Technology LLC 发明人 Cheng Yuhang;Franzen Scott;Rejda Ed F.;Wierman Kurt W.;Seigler Michael Allen
分类号 G11B11/00;G11B5/40;G11B5/48;G11B5/00 主分类号 G11B11/00
代理机构 Mueting, Raasch & Gebhardt, P.A. 代理人 Mueting, Raasch & Gebhardt, P.A.
主权项 1. A device comprising: a near field transducer (NFT); a gas barrier layer positioned on at least a portion of the NFT; and a wear resistance layer positioned on at least a portion of the gas barrier layer wherein the gas barrier layer comprises diamond like carbon (DLC).
地址 Cupertino CA US
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