Operating method of memory system including NAND flash memory, variable resistance memory and controller

摘要

An operating method is for a memory system which includes a NAND flash memory, a resistance variable memory, and a controller controlling the NAND flash memory and the resistance variable memory. The operating method includes receiving data, programming the received data in the NAND flash memory when the received data is at least a super page of data, programming the received data in the resistance variable memory when the received data is not a super page of data, and programming data accumulated in the resistance variable memory in the NAND flash memory when the accumulated data is a super page of data. A super page of data is an entirety of data that is programmable in memory cells connected to a same word line of the NAND flash memory.

主权项

1. An operating method of a memory system, the memory system including a NAND flash memory, a resistance variable memory, and a controller controlling the NAND flash memory and the resistance variable memory, the method comprising:
receiving data; programming the received data in the NAND flash memory when the received data is at least a super page of data; programming the received data in the resistance variable memory when the received data is not the super page of data; and programming data accumulated in the resistance variable memory in the NAND flash memory when the data accumulated in the resistance variable memory is the super page of data, wherein the super page of data is an entirety of data that is programmable in memory cells connected to a same word line of the NAND flash memory.