Magnetoresistive element and manufacturing method of the same

摘要

A magnetoresistive element has a magnetic layer, an insulating layer and a magnetic layer, which are laminated on a base electrode, and side walls of the magnetic layers that are formed when the magnetic layers are processed. At least one element selected from the group of consisting He, C, N, O, F, Ne, Ti, V, Cu, Al, Si, P, S, Cl, Ar, Ge, As, Kr, Zr, In, Sn, Sb, Pb and Bi is injected into the side walls and edge portions of the magnetic layers to improve the magnetic characteristics of the first and second magnetic layers.

主权项

1. A magnetoresistive element comprising:
a laminated structure including a first magnetic layer, an insulating layer, and a second magnetic layer formed on a base electrode, wherein each of the first and second magnetic layers includes an outer periphery portion, at least one element selected from the group consisting of He, C, N, O, F, Ne, Ti, V, Cu, Al, Si, P, S, Cl, Ar, Ge, As, Kr, Zr, In, Sn, Sb, Pb and Bi is included in each of the outer periphery portions, and a magnetization of the outer periphery portions of the first and second magnetic layers is deactivated; and a side wall formed on the laminated structure, the side wall containing materials of the first magnetic layer and the base electrode.