Magnetic devices having perpendicular magnetic tunnel junction

摘要

Provided are magnetic memory devices with a perpendicular magnetic tunnel junction. The device includes a magnetic tunnel junction including a free layer structure, a pinned layer structure, and a tunnel barrier therebetween. The pinned layer structure may include a first magnetic layer having an intrinsic perpendicular magnetization property, a second magnetic layer having an intrinsic in-plane magnetization property, and an exchange coupling layer interposed between the first and second magnetic layers. The exchange coupling layer may have a thickness maximizing an antiferromagnetic exchange coupling between the first and second magnetic layers, and the second magnetic layer may exhibit a perpendicular magnetization direction, due at least in part to the antiferromagnetic exchange coupling with the first magnetic layer.

主权项

1. A magnetic tunnel junction device comprising:
a free layer structure; a pinned layer structure; and a tunnel barrier between the free layer structure and the pinned layer structure, wherein the pinned layer structure comprises:
a first magnetic layer having an intrinsic perpendicular magnetization property;a second magnetic layer having an intrinsic in-plane magnetization property and extrinsic perpendicular magnetization direction; andan exchange coupling layer interposed between the first and second magnetic layers, wherein the exchange coupling layer has a thickness of about 2.5 Å to about 5.0 Å.