| 发明名称 |
Resistive memory devices, circuits and methods having read current limiting |
| 摘要 |
A memory device, comprising: read circuits coupled to a plurality of memory elements programmable between at least two different resistance states, the read circuits generating output values based on resistance states of selected memory elements in a read operation; and current limit circuits that limit a current flow through each memory element to less than a program threshold current; wherein the program threshold current corresponds to a current that flows through a memory element being programmed to cause its resistance to change to a resistance between that of two different resistance states. |
| 申请公布号 |
US9165648(B1) |
申请公布日期 |
2015.10.20 |
| 申请号 |
US201113336642 |
申请日期 |
2011.12.23 |
| 申请人 |
Adesto Technologies Corporation |
发明人 |
Jameson, III John Ross |
| 分类号 |
G11C17/00;G11C13/00 |
主分类号 |
G11C17/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device, comprising:
read circuits coupled to a plurality of memory elements that are programmable between at least two different resistance states, the read circuits generating output values based on resistance states of selected memory elements in a read operation; and current limit circuits that limit a current flow through each memory element to less than a program threshold current in the read operation, the current limit circuits being connected in series with the selected memory elements between the read circuits and a predetermined voltage; wherein the program threshold current corresponds to a current that flows through a memory element being programmed to cause its resistance to change to a resistance between that of two different resistance states. |
| 地址 |
Sunnyvale CA US |
