Semiconductor devices and methods of fabricating the same

摘要

A semiconductor device, and a method of fabricating the same, include a substrate including two-dimensionally arranged active portions, device isolation patterns extending along sidewalls of the active portions, each of the device isolation patterns including first and second device isolation patterns, gate patterns extending across the active portions and the device isolation patterns, each of the gate patterns including a gate insulating layer, a gate line and a gate capping pattern, and ohmic patterns on the active portions, respectively. Top surfaces of the first device isolation pattern and the gate insulating layer may be lower than those of the second device isolation pattern and the gate capping pattern, respectively, and the ohmic patterns may include an extending portion on the first insulating layer.

主权项

1. A semiconductor device, comprising:
a substrate including a plurality of active portions delimited by a plurality of first trenches and a plurality of second trenches; a plurality of device isolation patterns in the plurality of first trenches and extending along sidewalls of the plurality of active portions; a plurality of gate patterns in the plurality of second trenches and extending along sidewalls of the plurality of active portions and across the plurality of device isolation patterns; a plurality of ohmic patterns on the plurality of active portions, respectively; and a plurality of metal patterns coupled to the plurality of ohmic patterns, wherein each of the plurality of ohmic patterns has a portion having a width greater than a width of a corresponding one of the plurality active portions thereunder, when measured in a direction parallel to the plurality of first and second trenches.