发明名称 |
Semiconductor package and method of fabricating the same |
摘要 |
A semiconductor package and a method of fabricating the same. The method may include mounting a lower stack including a plurality of lower semiconductor chips on a substrate and mounting an upper stack including a plurality of upper semiconductor chips on the lower stack. According to example embodiments of the inventive concept, the semiconductor package can be easily fabricated. |
申请公布号 |
US9165916(B2) |
申请公布日期 |
2015.10.20 |
申请号 |
US201414326631 |
申请日期 |
2014.07.09 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Chung Hyunsoo;Baek Seungduk;Lee In-Young;Cho Tae-Je |
分类号 |
H01L21/44;H01L21/48;H01L25/00;H01L25/065;H01L23/48;H01L23/29;H01L21/56;H01L23/00;H01L23/31 |
主分类号 |
H01L21/44 |
代理机构 |
Ellsworth IP Group PLLC |
代理人 |
Ellsworth IP Group PLLC |
主权项 |
1. A method of fabricating a semiconductor package, comprising:
stacking a plurality of lower semiconductor chips to form a lower stack; mounting the lower stack on a substrate; forming a lower mold layer on the substrate to enclose a side surface of the lower stack and to expose a top surface of the lower stack; mounting an upper stack including a plurality of upper semiconductor chips on the lower stack having the side surface enclosed by the lower mold layer; wherein the mounting of the lower stack comprises providing lower solder balls on a bottom surface of the lower stack and performing a reflow process to a structure with the lower solder balls to form lower connecting portions that are disposed between the substrate and the lower stack and are electrically connected to the substrate; and wherein the forming of the lower stack comprises preparing a first semiconductor substrate, on which a first semiconductor chip formed with first through vias is provided; mounting a second semiconductor chip with second through vias, on the first semiconductor chip of the first semiconductor substrate; and performing a separation process to the first semiconductor substrate to form the lower stack including the first and second semiconductor chips that are sequentially stacked. |
地址 |
Suwon-si KR |