发明名称 |
Method for fabricating a semiconductor device with formation of conductive lines |
摘要 |
A substrate having a first region and second regions disposed on two sides of the first region; a first group of conductive lines extending from the first region to the second regions on the substrate; a second group of conductive lines alternating with the first group of times and extending from the first region to the second regions on the substrate; interlayer insulating layers formed over the substrate; insulating layers formed in first open regions of the interlayer insulating layers and the first group of conductive lines in the second region; and contact plugs contacting second group of conductive line formed in second open regions of the interlayer insulating layer in the second region. |
申请公布号 |
US9165884(B2) |
申请公布日期 |
2015.10.20 |
申请号 |
US201314020400 |
申请日期 |
2013.09.06 |
申请人 |
SK Hynix Inc. |
发明人 |
Kim Mi-Hye;Nam Byung-Sub |
分类号 |
H01L21/768;H01L23/528;H01L21/3213 |
主分类号 |
H01L21/768 |
代理机构 |
IP & T Group LLP |
代理人 |
IP & T Group LLP |
主权项 |
1. A semiconductor device comprising:
a substrate having a first region and second regions disposed on two sides of the first region; a first group of conductive lines extending from the first region to the second regions on the substrate; a second group of conductive lines alternating with the first group of times lines and extending from the first region to the second regions on the substrate; interlayer insulating layers formed over the substrate; insulating layers formed in first open regions of the interlayer insulating layers and the first group of conductive lines in the second region; and contact plugs contacting the second group of conductive line formed in second open regions of the interlayer insulating layer in the second region. |
地址 |
Gyeonggi-do KR |