Semiconductor devices and methods of forming same

摘要

A semiconductor device structure and methods of forming the same are disclosed. An embodiment is a method of forming a semiconductor device, the method comprising forming a first conductive line over a substrate, and conformally forming a first dielectric layer over a top surface and a sidewall of the first conductive line, the first dielectric layer having a first porosity percentage and a first carbon concentration. The method further comprises forming a second dielectric layer on the first dielectric layer, the second dielectric layer having a second porosity percentage and a second carbon concentration, the second porosity percentage being different from the first porosity percentage, and the second carbon concentration being less than the first carbon concentration.

主权项

1. A method of forming a semiconductor device, the method comprising:
forming a first conductive line and a second conductive line over a substrate; conformally forming a barrier layer along sidewalls and a top surface of the first conductive line, along sidewalls and a top surface of the second conductive line, and extending from the first conductive line to the second conductive line; conformally forming a first dielectric layer on the barrier layer, the first dielectric layer having a first porosity percentage and a first carbon concentration; forming a second dielectric layer on the first dielectric layer, the second dielectric layer having a second porosity percentage and a second carbon concentration, the second porosity percentage being different from the first porosity percentage, and the second carbon concentration being less than the first carbon concentration; and before the forming a first conductive line and a second conductive line, forming an etch stop layer over the substrate, the first conductive line and second conductive line being formed on the etch stop layer, at least the portion of the barrier layer extending from the first conductive line to the second conductive line is contacting a surface of the etch stop layer.