发明名称 METHOD OF GROWING GERMANIUM MONOCRYSTALS
摘要 FIELD: physics.SUBSTANCE: when drawing, linear displacement of the crystal is carried out at a rate of 0.6-0.9 mm/min in cycles, wherein monocrystals are drawn from a melt upwards, followed by lowering the monocrystal into the melt. The ratio of linear displacement upwards and downwards is 2:1. The value of absolute displacement upwards h in one cycle is calculated using a mathematical formula of the ratio of the crucible diameter to the crystal diameter, in mm: h is less than or equal to 1.5D/D.EFFECT: method enables to obtain germanium crystals with a low dislocation density.4 ex
申请公布号 RU2565701(C1) 申请公布日期 2015.10.20
申请号 RU20140148707 申请日期 2014.12.03
申请人 FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO OBRAZOVANIJA "TVERSKOJ GOSUDARSTVENNYJ UNIVERSITET" 发明人 KAPLUNOV IVAN ALEKSANDROVICH;KOLESNIKOV ALEKSANDR IGOREVICH;KOLESNIKOVA OL'GA JUR'EVNA
分类号 C30B15/20;C30B29/08 主分类号 C30B15/20
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