Multiple gate semiconductor devices and their applications

摘要

A multiple gate semiconductor structure is disclosed having a thin segment of semiconductor with first and second major surfaces that are opposite one another, a first gate on the first major surface of the segment, a second gate on the second major surface of the segment opposite the first gate, a first differential input coupled to the first gate, and a second differential input coupled to the second gate. Preferably the semiconductor structure is symmetrical about a plane that extends through the thin segment between the first and second major surfaces. When a first voltage of a first polarity is applied to the first input and a second voltage of the same magnitude as that of the first voltage but of opposite polarity is applied to the second input, a virtual ground is established in the structure near its center of the segment.

主权项

1. A semiconductor structure comprising:
a thin segment of a semiconductor having first and second major surfaces, a first gate on the first major surface of the segment, a second gate on the second major surface of the segment opposite the first gate, and first and second differential inputs coupled, respectively, to the first and second gates for applying to the gates signals of opposite polarity.