Composite semiconductor device with multiple threshold voltages

摘要

A device includes a semiconductor substrate, a first constituent transistor including a first plurality of transistor structures in the semiconductor substrate connected in parallel with one another, and a second constituent transistor including a second plurality of transistor structures in the semiconductor substrate connected in parallel with one another. The first and second constituent transistors are disposed laterally adjacent to one another and connected in parallel with one another. Each transistor structure of the first plurality of transistor structures includes a non-uniform channel such that the first constituent transistor has a higher threshold voltage level than the second constituent transistor.

主权项

1. A device comprising:
a semiconductor substrate; a first constituent transistor comprising a first plurality of transistor structures in the semiconductor substrate connected in parallel with one another; and a second constituent transistor comprising a second plurality of transistor structures in the semiconductor substrate connected in parallel with one another; wherein the first and second constituent transistors are disposed laterally adjacent to one another and connected in parallel with one another; wherein each transistor structure of the first plurality of transistor structures comprises a non-uniform channel such that the first constituent transistor has a higher threshold voltage level than the second constituent transistor; and wherein the first and second constituent transistors are arranged as inner and outer devices, respectively.