发明名称 Semiconductor memory devices, memory systems including the same and method of writing data in the same
摘要 In one embodiment, the semiconductor device includes a memory array and a control architecture configured to control reading data from and writing data to the memory array. The control architecture is configured to receive data and a codeword location in the memory array, select one or more data units in the received data based on a data mask, read a codeword currently stored at the codeword location in the memory array, error correct the read codeword to generate a corrected read codeword, form a new codeword from the selected data units of the received data and data units in the corrected read codeword that do not correspond to the selected data units, and write the new codeword to the memory array.
申请公布号 US9164834(B2) 申请公布日期 2015.10.20
申请号 US201414160614 申请日期 2014.01.22
申请人 Samsung Electronics Co., Ltd. 发明人 Chung Hoi-ju;Park Chul-sung;Lee Jae-Wook;Ryu Jang-Woo;Jang Tae-seong;Han Gong-heum
分类号 G06F11/10;G06F11/08;G11C29/42 主分类号 G06F11/10
代理机构 Harness, Dickey & Pierce 代理人 Harness, Dickey & Pierce
主权项 1. A semiconductor device, comprising: a memory array; and a control architecture configured to control reading data from and writing data to the memory array, the control architecture configured to, receive data and a codeword location in the memory array;select one or more data units in the received data based on a data mask;read a codeword currently stored at the codeword location in the memory array;error correct the read codeword to generate a corrected read codeword;form a new codeword from the selected data units of the received data and data units in the corrected read codeword that do not correspond to the selected data units; andwrite the new codeword to the memory array.
地址 Gyeonggi-do KR