Flared laser oscillator waveguide

摘要

A broad area semiconductor diode laser device includes a multimode high reflector facet, a partial reflector facet spaced from said multimode high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1. The broad area semiconductor laser device is a flared laser oscillator waveguide delivering improved beam brightness and beam parameter product over conventional straight waveguide configurations.

主权项

1. A broad area semiconductor diode laser device comprising:
a multimode high reflector facet; a partial reflector facet spaced from said multimode high reflector facet; and a flared current injection region extending and widening between said multimode high reflector facet and said partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1; wherein said flared current injection region propagates light such that a beam output at said partial reflector facet has a narrower beam width than said partial reflector facet width and a corresponding narrower slow-axis divergence; wherein said narrower beam width and narrower slow-axis divergence in conjunction with an enlarged total pumped area provided b the flaring of said flared current injection region are operable to reduce thermal resistance and electrical series resistance and result in increased beam brightness and lower beam parameter product of said beam output for a selected device output power.