Method of manufacturing semiconductor device with through hole

摘要

A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a pad electrode formed on a semiconductor substrate through a first insulation layer, and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein the via hole includes a first opening of which a diameter in a portion close to the pad electrode is larger than a diameter in a portion close to the back surface of the semiconductor substrate, and a second opening formed in the first insulation layer and continuing from the first opening, of which a diameter in a portion close to the pad electrode is smaller than a diameter in a portion close to the front surface of the semiconductor substrate.

主权项

1. A method of manufacturing a semiconductor device, comprising:
providing a device intermediate comprising a semiconductor substrate, a first insulation layer disposed on a front surface of the semiconductor substrate and a pad electrode disposed on the first insulation layer; forming a first opening in the semiconductor substrate from a back surface thereof so that the first insulation layer is exposed at a bottom of the first opening and that the first opening has a maximum lateral size thereof in a position closer to the front surface than to the back surface; removing the exposed first insulation layer to form a second opening so that the pad electrode is exposed at a bottom of the second opening and that a lateral size of the second opening increases from the pad electrode toward the first opening, the first opening and the second opening forming a via hole penetrating the semiconductor substrate and the first insulation layer; and cutting the device intermediate so as not to cut through the via hole and so as to produce a semiconductor device having the via hole therein.